久久露脸国产老熟女,亚洲第一AV网站,992tv人人大香草网站

首頁(yè) >FDN359AN(UMW)>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FDN359B	文件：423.52 Kbytes Page：6 Pages	N-Channel30V(D-S)MOSFET Features VDS(V)=30V RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
FDN359B	文件：331.27 Kbytes Page：6 Pages	N-Channel30V(D-S)MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
FDN359BN	文件：96.5 Kbytes Page：6 Pages	N-ChannelLogicLevelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDN359BN	文件：106.63 Kbytes Page：6 Pages	N-ChannelLogicLevelPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchild’sSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandba	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FDN359BN	文件：423.52 Kbytes Page：6 Pages	N-Channel30V(D-S)MOSFET Features VDS(V)=30V RDS(ON)	UMWUMW Rightway Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司(簡(jiǎn)稱UMW?)	UMW
FDN359BN	文件：331.27 Kbytes Page：6 Pages	N-Channel30V(D-S)MOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproduced usingprocessthathasbeenespeciallytailoredto minimizeon-stateresistanceandyetmaintain superiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageand batterypoweredapplicationswherelowin-line	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體	EVVOSEMI
FW359	文件：74.14 Kbytes Page：6 Pages	FW359	SANYOSanyo 三洋三洋電機(jī)株式會(huì)社	SANYO
GL359	文件：334.32 Kbytes Page：2 Pages	PNPSILICONPLANARHIGHCURRENTTRANSISTOR	ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司	ETL
GL359	文件：330.93 Kbytes Page：2 Pages	PNPSILICONPLANARHIGHCURRENTTRANSISTOR	GTM 勤益投資控股股份有限公司	GTM
GSC-359	文件：110.97 Kbytes Page：3 Pages	Two-PieceGroundingConnectorsforShieldedandCoaxialCable	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
GSR-359	文件：110.97 Kbytes Page：3 Pages	Two-PieceGroundingConnectorsforShieldedandCoaxialCable	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
HVC359	文件：23.4 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HVC359	文件：33.54 Kbytes Page：2 Pages	VariableCapacitanceDiodeforVCXO FEATURES ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.	LRCLeshan Radio Company 樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司	LRC
HVC359	文件：138.74 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HVD359	文件：44.7 Kbytes Page：1 Pages	VariableCapacitanceDiodeforVCXO Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	ZHAOXINGWEI Zhaoxingwei Electronics ., Ltd	ZHAOXINGWEI
HVD359	文件：34.73 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HVD359	文件：52.25 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HVD359	文件：33.76 Kbytes Page：1 Pages	VariableCapacitanceDiodeforVCXO Features ●HighcapacitanceratioandgoodC-Vlinearity. ●Tobeusableatlowvoltage. ●SupersmallFlatLeadPackage(SFP)issuitableforsurfacemountdesign.	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司	KEXIN
HVU359	文件：25.16 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCXO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.	HitachiHitachi Semiconductor 日立日立公司	Hitachi
HVU359	文件：139.76 Kbytes Page：5 Pages	VariableCapacitanceDiodeforVCO Features ?HighcapacitanceratioandgoodC-Vlinearity. ?Tobeusableatlowvoltage. ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS

12 3 >>>

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市弘揚(yáng)芯城科技有限公司	FDN359AN(UMW)	UMW(廣東友臺(tái)半導(dǎo)體)	24+	SOT-23	5000	誠(chéng)信服務(wù),絕對(duì)原裝原盤。	詢價(jià)
深圳市共奕科技有限公司	FDN359AN(UMW)	UMW(友臺(tái)半導(dǎo)體)	1年內(nèi)	SOT-23(TO-236)	150000	友臺(tái)代理商共奕芯城一站式元器件采購(gòu)平臺(tái) 自助下單 w	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	FDN359AN(UMW)		24+	N/A	62000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市振宏微科技有限公司	FDN359AN,1N5365BRLG,T7C01F	SOT-23	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FDN359AN/359A	FAIRCHILD/FSC/仙童飛兆半	24+	SOT-23	252200	新進(jìn)庫(kù)存/原裝	詢價(jià)
深圳市勝彬電子有限公司	FDN359AN/F40	FAIRCILD	22+	SOT-23	8000	原裝正品支持實(shí)單	詢價(jià)
深圳市弘為電子有限公司	FDN359AN\359A	FAIRCHIL	16+	SOT-23	294000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市鼎欣微電子有限公司	FDN359AN_NL	FAIRCHILD/仙童	21+	SOT-23	30100	只做正品原裝現(xiàn)貨	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	FDN359AN_NL	FAIRCHILD/仙童	23+	SOT-23	30000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市富芯樂(lè)電子科技有限公司	FDN359AN_NL	FAIRCHILD	22+	SSOT3	5000	全新原裝品牌專營(yíng)	詢價(jià)

更多FDN359AN(UMW)供應(yīng)商更新時(shí)間2024-11-8 18:26:00

相關(guān)規(guī)格書

相關(guān)庫(kù)存