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ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

FDB150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDB150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDI150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDI150N10

N-ChannelPowerTrench?MOSFET100V,57A,16m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP150N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=12m?(Typ.)@VGS=10V,ID=49A ?Fa

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDP150N10A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP150N10A

N-ChannelPowerTrench?MOSFET100V,50A,15m廓

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintainingsuperiorswitchingperformance. Features ?RDS(on)=12.5mΩ(Typ.)@VGS=10V,ID=50A ?FastSwitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FIR150N10PG

N-ChannelSuperTrenchPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

HRLD150N10K

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HRLF150N10K

100AvalancheTested

SEMIHOW

SemiHow Co.,Ltd.

HRLP150N10K

OriginativeNewDesign

SEMIHOW

SemiHow Co.,Ltd.

IXFN150N10

HiPerFETPowerMOSFET

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFN150N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

LMPC150N10

N-ChannelSuperTrenchPowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

STE150N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE ■HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY(SEESTH60N10FORRATING) ■VERYLARGESOA-LARGEPEAKPOWERCAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHETWOSOURCETERMINALS ■EXTREMELYLOWRthJU

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

SW150N10A

N-channelTO-220MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
TO-220
貨真價實,假一罰十
25000
詢價
FAIRCHILD/仙童
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
FAIRCHILD/仙童
22+
TO-220
31250
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
FAIRCHILD/仙童
22+
TO-220
40256
本公司只做原裝進口現(xiàn)貨
 詢價
ON/安森美
24+
N/A
5000
只做原裝正品現(xiàn)貨
 詢價
FAIRCHILD/仙童
24+
TO220
58000
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
 詢價
Fairchild
24+
TO-220
180
詢價
Fairchild
23+
TO-220
7750
全新原裝優(yōu)勢
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多FDP150N10IC供應商 更新時間2025-1-19 10:02:00

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