FDP22N50N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDP22N50N

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FDP22N50N

N-ChannelMOSFET500V,22A,0.22廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRFBA22N50

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.
SwitchModePowerSupply(SMPS) 2.
UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.
LowGateChargeQgresultsinSimpleDriveRequirement 2.
ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.
FullyCharacterizedCapacitan

IRFBA22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A)

Applications 1.
SwitchModePowerSupply(SMPS) 2.
UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.
LowGateChargeQgresultsinSimpleDriveRequirement 2.
ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.
FullyCharacterizedCapacitan

IRFBA22N50APBF

HEXFET?PowerMOSFET

IRFP22N50A

PowerMOSFET

IRFP22N50A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerS

IRFP22N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A)

Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent

IRFP22N50A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.23?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation