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FDPF10N60NZ

These N-Channel enhancement mode power field effect transistors are produced using Fairchild?? proprietary, planar stripe, DMOS technology.

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60NZ

N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m?

Description UniFET?IIMOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonadvancedplanarstripeandDMOStechnology.ThisadvancedMOSFETfamilyhasthesmalleston-stateresistanceamongtheplanarMOSFET,andalsoprovidessuperiorswitchingperformanceandhigheravala

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

N-Channel MOSFET, FRFET 600V, 9A, 0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF10N60NZ

N-Channel 65 0V (D-S)Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

FDPF10N60ZUT_12

N-Channel MOSFET, FRFET 600V, 9A, 0.8廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

N-ChannelMOSFET,FRFET600V,9A,0.8廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF10N60ZUT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FGP10N60UNDF

600V,10AShortCircuitRatedIGBT

GeneralDescription UsingadvancedNPTIGBTtechnology,Fairchild’stheNPTIGBTsoffertheoptimumperformanceforlow-powerinverterdrivenapplicationswherelow-lossesandshort-circuitruggednessfeaturesareessential,suchassewingmachine,CNC,motorcontrolandhomeappliances. Features

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FGPF10N60UNDF

600V,10AShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FIR10N60AFG

600VN-ChannelMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FIR10N60FG

AdvancedN-ChPowerMOSFET-G

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FM10N60

FM10N6010Amps600VoltageN-ChannelPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FMC10N60E

N-CHANNELSILICONPOWERMOSFETFeatures

FujiFuji Electric

富士電機富士電機株式會社

FMC10N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.79Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMI10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMP10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMV10N60E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FQA10N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA10N60C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.73Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    FDPF10N60

  • 功能描述：

    MOSFET 600V N-Chan MOSFET UniFET-II

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
TO-220F
20540
保證進口原裝現(xiàn)貨假一賠十
 詢價
onsemi
24+
TO-220F-3
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
23+
TO-220F
58000
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
FAIRCHI
17+
TO-220F
8315
原裝現(xiàn)貨價格絕對優(yōu)勢Y
 詢價
FAIRCHILD/仙童
24+
TO220
3580
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗歡迎詢價
 詢價
ON/安森美
2105+
TO-220F
10053
詢價
FAIRCHILD
22+
TO-220
6850
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
FAIRCHILD
23+
TO-220F
69200
一級分銷商
 詢價
仙童
24+
NA
6800
詢價
仙童
13+
TO-220F
1250
只做原裝正品
 詢價
更多FDPF10N60供應商 更新時間2025-1-5 22:34:00

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