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FDPF16N50T

N-Channel UniFETTM MOSFET 500 V, 16 A, 380 m廓

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF16N50T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=16A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDPF16N50T_12

500V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF16N50UT

RDS(on)=370m廓(Typ.)@VGS=10V,ID=7.5A

Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.UniFETUltraFRFETTMMOSFEThas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF16N50UT

N-ChannelUniFETTMUltraFRFETMOSFET

Description UniFET?MOSFETisFairchildSemiconductor?’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.UniFETUltraFRFETTMMOSFEThas

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDPF16N50UT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.48Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FIR16N50FG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導體深圳市福斯特半導體有限公司

FMC16N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=16A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FMC16N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

FMC16N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機富士電機株式會社

詳細參數(shù)

  • 型號:

    FDPF16N50T

  • 功能描述:

    MOSFET 500V 16A NCH MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Fairchild
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更多FDPF16N50T供應商 更新時間2025-1-22 14:14:00