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FDS2070N3

150V N-Channel PowerTrench MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedfor“l(fā)owside”synchronousrectifieroperation,providinganextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS2070N7

150V N-Channel PowerTrench MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FN-2070

Multi-stagePerformanceAC/DCEMIFilter

SCHAFFNER

Schaffner International Ltd

GAPM2070P

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GEMBR2070CT

SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE70VTO150V,CURRENT20A

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GEMBR2070CT

SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE70VTO150V,CURRENT20A

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GEMBR2070T

SCHOTTKYBARRIERRECTIFIERS

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GRF2070

Ultra-LowNoiseAmplifierTuningRange:0.1to1.5GHz

GUERRILLA

Guerrilla RF, Inc.

HAT2070R

SiliconNChannelPowerMOSFETPowerSwitching

Features ?Capableof4.5Vgatedrive ?Lowdrivecurrent ?Highdensitymounting ?Lowon-resistance RDS(on)=11m?typ(atVGS=10V)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2070R

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HAT2070R

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導體有限公司

HAT2070R-EL-E

SiliconNChannelPowerMOSFETPowerSwitching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HT-2070A

LOTTOFLASHDRIVER

HoltekHolmate Technology Corp. (Holtek)

合泰合泰半導體

JT2070FA

MouldedCaseCircuitBreakers16-2500AmperesforIEC60947-2Applications

EATONEaton All Rights Reserved.

伊頓伊頓公司

MBR2070

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-20.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-free moldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導體深圳辰達半導體有限公司

MBR2070

SCHOTTKYBARRIERRECTIFIERDIODES

Features ●TheplasticpackagecarriesUnderwritersLaboratory ●FlammabilityClassification94V-0 ●Constructionutilizesvoid-free ●moldedplastictechnique ●Lowreverseleakage ●Highforwardsurgecurrentcapability ●Hightemperaturesolderingguaranteed: ●250°C,0.25”(6.35mm)from

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

MBR2070

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導體深圳辰達半導體有限公司

MBR2070CT

DUALSCHOTTKYRECTIFIERS

VOLTAGERANGE:70-100VCURRENT:20A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,free wheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

MBR2070CT

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR2070CT

SWITCHMODE??PowerRectifiers

SWITCHMODE?PowerRectifiers ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate–of–the–artdeviceshavethefollowingfeatures: ?20AmpsTotal(10AmpsPerDiodeLeg) ?Guard–RingforStressProtection ?LowForwardVoltage ?150°COperatingJunctionTemper

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

詳細參數(shù)

  • 型號:

    FDS2070N

  • 功能描述:

    MOSFET 150V NCh PowerTrench

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi(安森美)
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更多FDS2070N供應商 更新時間2024-12-26 15:14:00