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FDS4435BZ

P-ChannelPowerTrench?MOSFET-30V,-8.8A,20m廓

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435BZ

30VoltP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeenespeciallytailoredtominimizetheon-stateresistance. ThisdeviceiswellsuitedforPowerManagementandloadswitchingapplicationscommoninNotebookComputers

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS4435BZ

-30VP-ChannelMOSFET

GeneralDescription ThisdeviceiswellsuitedforPowerManagementandload switchingapplicationscommoninNotebookComputersand PortableBatteryPacks. Features VDS(V)=-30V ID=-8.8A(VGS=-10V) RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導體

FDS4435BZ-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FDS4435-NL

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435Q

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435Qusesadvancedtrenchtechnologytoprovideexcellent RDS(on),shoot-throughimmunity,bodydiodecharacteristicsandultra-lowgate resistance.ThisdeviceisideallysuitedforuseasalowsideswitchinNotebook CPUcorepowerconversion. APPLICATIONS BatteryS

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FQ4435SQ

Plastic-EncapsulateMOSFETS

DESCRIPTION TheFQ4435SQusesadvancedtrenchtechnologytoprovideexcellentR shoot-throughimmunity,bodydiodecharacteristicsandltra-lowgateresistance. ThisdeviceisideallysuitedforuseasalowsideswitchinNotebookCPUcorepowerconversion. APPLICATIONS BatterySwitch L

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

FS4435

SingleP-ChannelEnhancementModePowerMOSFET

FortuneFortune Semiconductor Corp.

富晶富晶電子股份有限公司

FTK4435

HighPowerandcurrenthandingcapability

FS

First Silicon Co., Ltd

G4435SS

P-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

GAPM4435

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

GF4435

P-ChannelEnhancement-ModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLowOn-Resistance ?SpeciallyDesignedforLowVoltageDC/DCConverters ?FastSwitchingforHighEfficiency

GE

GE Industrial Company

GF4435

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

GP4435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GSC4435

P-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GT4435PW

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

H4435S

P-ChannelEnhancement-ModeMOSFET(-30V,-9.1A)

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

IM4435G

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

IRF4435TRPBF

P-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

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查現(xiàn)貨到京北通宇商城
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80000
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24+
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16800
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21+
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10000
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50000
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2020+
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10000
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10569
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23+
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9000
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更多FDS4435A-NL-VB供應商 更新時間2025-1-7 11:06:00