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FDT4N50NZU中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FDT4N50NZU
廠商型號(hào)

FDT4N50NZU

功能描述

MOSFET - Power, N-Channel, UniFET II, Ultra FRFET 500 V, 2 A, 3

絲印標(biāo)識(shí)

FDT4N50NZU

封裝外殼

SOT-223

文件大小

213.53 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

ONSEMI安森美半導(dǎo)體

中文名稱(chēng)

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 18:30:00

FDT4N50NZU規(guī)格書(shū)詳情

Description

UniFET II MOSFET is ON Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest on?state

resistance among the planar MOSFET, and also provides superior

switching performance and higher avalanche energy strength. In

addition, internal gate?source ESD diode allows UniFET II MOSFET

to withstand over 2 kV HBM surge stress. UniFET II Ultra FRFET

MOSFET has much superior body diode reverse recovery

performance. Its trr is less than 50 nsec and the reverse dv/dt immunity

is 20 V/nsec while normal planar MOSFETs have over 200 nsec and

4.5 V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET

can remove additional component and improve system reliability in

certain applications that require performance improvement of the

MOSFET’s body diode. This device family is suitable for switching

power converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Features

? Typ. RDS(on) = 2.42 

? Ultra Low Gate Charge (Typ. Qg = 9.1 nC)

? 100 Avalanche Tested

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

? Computing / Display Power Supplies

? Industrial Power Supplies

? Consumer Power Supplies

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