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HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

Intersil

Intersil Corporation

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    FDZ299P_Q

  • 功能描述：

    MOSFET 20V/12V PCh MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
23+
BGA-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
23+
BGA
60000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FAIRCHILD/仙童
24+
BGA
60000
全新原裝現(xiàn)貨
 詢價
NXP/恩智浦
23+
SOD323
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
FAIRCHILD
23+
BGA
10000
全新原裝現(xiàn)貨
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
Fairchild
1930+
N/A
1279
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
ON
1809+
QFN-4
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
FAIRCHILD
23+
4-WLCSP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
Fairchild
22+
NA
1279
加我QQ或微信咨詢更多詳細信息,
 詢價
更多FDZ299P_Q供應商 更新時間2025-4-25 10:59:00

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