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FGB20N60SF

600V, 20A Field Stop IGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N60SFD

600V, 20A Field Stop IGBT

GeneralDescription Usingnovelfield-stopIGBTtechnology,Fairchild’snewseriesoffield-stopIGBTsofferstheoptimumperformanceforautomotivechargers,inverters,andotherapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Lowsat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFD

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFDTU

Highcurrentcapability,Highinputimpedance

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

FGH20N60SFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFDTU

IGBT-FieldStop600V,20A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH20N60UF

600V,20AFieldStopIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFD

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFDTU

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N60UFD

600V,20AFieldStopIGBT

GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N60UFDTU

600V,20AFieldStopIGBT

GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR20N60AFG

600VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR20N60FG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FML20N60

20Amps600VoltageNChannelMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQP20N60

600V,20AN-ChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FQPF20N60

600V,20AN-ChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FTW20N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

G20N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G20N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: ??-parallelswitchingcapability ??-moderateEoffincreasewithtemperature ??-

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    FGB20N60S

  • 功能描述：

    IGBT 晶體管 600V 20A Field Stop

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
19+
TO263
18985
詢價
onsemi/安森美
新批次
D2PAK
4500
詢價
onsemi(安森美)
23+
D2PAK
1471
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
ONSEMI
18+ROHS
NA
2800
全新原裝!優(yōu)勢庫存熱賣中!
 詢價
ON/安森美
2410+
TO-263
1800
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
 詢價
FAI
22+23+
TO263
27922
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
三年內(nèi)
1983
只做原裝正品
 詢價
FAIRCHILD
24+
TO263
65200
一級代理/放心采購
 詢價
ON/安森美
24+
D2PAK-3
25500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
Fairchild
1930+
N/A
908
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 詢價
更多FGB20N60S供應(yīng)商 更新時間2024-12-29 16:04:00

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