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FGB30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2DT

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB30N6S2T

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號:

    FGB30N6S2D

  • 功能描述:

    IGBT 晶體管 Dl 600V Size 3 N-Ch

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRC
23+
原廠原裝
25000
專業(yè)優(yōu)勢供應(yīng)
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FAI
23+
65480
詢價
FAIRCHILD
21+
35200
一級代理/放心采購
詢價
FAIRCHILD/仙童
23+
SOT-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FAIRCHILD
23+
S0T-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
Fairchild/ON
22+
TO263AB
9000
原廠渠道,現(xiàn)貨配單
詢價
FAIRCHILD/仙童
2022
SOT-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
Fairchild/ON
21+
TO263AB
13880
公司只售原裝,支持實單
詢價
FAIRCHILD
03+
S0T-263
134
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
更多FGB30N6S2D供應(yīng)商 更新時間2024-10-25 18:33:00