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首頁(yè) >FGD3N60UNDF>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
FGD3N60UNDF	文件：1.036569 Mbytes Page：10 Pages	Using advanced NPT IGBT technology, Fairchild??? the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB3N60	文件：581.81 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB3N60	文件：660.97 Kbytes Page：4 Pages	ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQB3N60C	文件：753.45 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB3N60C	文件：869.48 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB3N60CTM	文件：869.48 Kbytes Page：8 Pages	600VN-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB3N60CTM	文件：753.45 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD3N60	文件：575.95 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD3N60C	文件：754.82 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD3N60CTF	文件：754.82 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD3N60CTM	文件：754.82 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI3N60	文件：581.81 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP3N60	文件：569.57 Kbytes Page：8 Pages	600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP3N60C	文件：738.4 Kbytes Page：8 Pages	600VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP3N60C	文件：301.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
FQPF3N60	文件：737.32 Kbytes Page：7 Pages	600VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
FQPF3N60	文件：557.13 Kbytes Page：8 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU3N60	文件：575.95 Kbytes Page：9 Pages	600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IXTA3N60P	文件：227.72 Kbytes Page：4 Pages	PolarHVTMPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTA3N60P	文件：234.48 Kbytes Page：4 Pages	N-ChannelEnhancementModeAvalancheRated	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號(hào)：
FGD3N60UNDF
功能描述：
IGBT 晶體管 600V, 3A Short Circuit Rated IGBT
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集電極—發(fā)射極最大電壓
VCEO：
650 V
集電極—射極飽和電壓：
2.3 V
柵極/發(fā)射極最大電壓：
20 V 在25
C的連續(xù)集電極電流：
150 A
柵極—射極漏泄電流：
400 nA
功率耗散：
187 W
封裝/箱體：
TO-247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市高捷芯城科技有限公司	FGD3N60UNDF	onsemi(安森美)	23+	TO-252	2669	原廠訂貨渠道,支持BOM配單一站式服務(wù)	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	FGD3N60UNDF	onsemi	24+	TO-252-3,DPak(2 引線 + 接片	30000	晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品	詢價(jià)
深圳市達(dá)恩科技有限公司	FGD3N60UNDF	ONSemiconductor	18+	NA	3597	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市納立科技有限公司	FGD3N60UNDF		三年內(nèi)		1983	只做原裝正品	詢價(jià)
深圳市仟禧電子有限公司	FGD3N60UNDF	FAIRCHILD/仙童	22+	SOT-252	20000	保證原裝正品,假一陪十	詢價(jià)
艾睿國(guó)際（香港）有限公司	FGD3N60UNDF	ON/安森美	2021+	TO-252	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市航潤(rùn)創(chuàng)能電子集團(tuán)有限公司	FGD3N60UNDF	ON	21+	SOT-252	202	原裝現(xiàn)貨假一賠十	詢價(jià)
深圳市科雨電子有限公司	FGD3N60UNDF	ON	1809+	TO-252	3675	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市正納電子有限公司	FGD3N60UNDF	ON(安森美)	23+	NA	20094	正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持	詢價(jià)
深圳市吉銀科技有限公司	FGD3N60UNDF	ON(安森美)			6000		詢價(jià)

更多FGD3N60UNDF供應(yīng)商更新時(shí)間2025-1-9 10:10:00

詳細(xì)參數(shù)

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