首頁 >FGH60N60SFTU>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FGH60N60SFTU | 600V, 60A Field Stop IGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
FGH60N60SFTU | 包裝:管件 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT FIELD STOP 600V 120A TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforSolarInverter,UPS,SMPS,IHandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?MaximumJunctionTemperature: | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IGBT-FieldStop600V,60A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop2ndgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features ?Maximum | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
FieldStopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.4V@IC=60A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600V,60AFieldStopIGBT GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconduc tionandswitchinglossesareessential. Features ?Highcurrentcapability ? | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
600Vinsulatedgatebipolartransistor | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
600Vinsulatedgatebipolartransistor | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
SingleDieMOSFET | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETsSingleDieMOSFET HiPerFETPowerMOSFETsSingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwi | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PreliminaryTechnicalInformation | IXYS IXYS Corporation | IXYS | ||
Ultra-LowVCE(sat)IGBT Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot | IXYS IXYS Corporation | IXYS | ||
HIGHCURRENTMOSIGBT ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IXYS IXYS Corporation | IXYS | ||
Ultra-LowVCE(sat)IGBT Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot | IXYS IXYS Corporation | IXYS | ||
Ultra-LowVCE(sat)IGBT Features ●InternationalstandardpackageSOT-227B ●Aluminiumnitrideisolation -highpowerdissipation ●Isolationvoltage3000V~ ●Veryhighcurrent,fastswitchingIGBT ●LowVCE(sat)forminimumon-stateconductionlosses ●MOSGateturn-ondrivesimplicity ●Lowcollector-to-cas | IXYS IXYS Corporation | IXYS | ||
Ultra-LowVCE(sat)IGBT Features ?InternationalstandardpackageJEDECTO-247AD,TO-264,TO-268 ?NewgenerationHDMOSTMprocess ?LowVCE(sat)forminimumon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-ondrivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobot | IXYS IXYS Corporation | IXYS |
產(chǎn)品屬性
- 產(chǎn)品編號:
FGH60N60SFTU
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
管件
- IGBT 類型:
場截止
- 不同?Vge、Ic 時?Vce(on)(最大值):
2.9V @ 15V,60A
- 開關(guān)能量:
1.79mJ(開),670μJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時 Td(開/關(guān))值:
22ns/134ns
- 測試條件:
400V,60A,5 歐姆,15V
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
IGBT FIELD STOP 600V 120A TO247
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO247 |
1310 |
原廠授權(quán)代理 價格絕對優(yōu)勢 |
詢價 | ||
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
詢價 | |||
Fairchild |
24+ |
TO-247 |
14 |
詢價 | |||
FSC |
2016+ |
TO-247 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
Fairchild |
23+ |
TO-3P |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
ONSemiconductor |
18+ |
NA |
3383 |
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190 |
詢價 | ||
FAIRCHILD |
22+23+ |
TO247 |
9524 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
1844+ |
TO-247-3 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
FAIRCHI |
21+ |
TO247 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 |
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