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FGR15N40A

Strobe Flash N-Channel Logic Level IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGS15N40L

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGS15N40L

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGS15N40LTF

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features ?HighInputImpedance ?H

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGW15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MGB15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGB15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGC15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FGR15N40A

  • 功能描述：

    MOSFET SINGLE 600V SMPS II SZ 4 N-CH IGBT

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FSC
24+
SSOT8
50
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FSC
23+
SSOT-8
6800
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FAIRCHILD
23+
NA
19960
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FSC/ON
23+
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1217
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FSC
22+
NA
27003
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FAIRCHILD +
2025+
SSOT-8
3715
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24+
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82000
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MITSUBISH
24+
MODULE
2100
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MITSUBISH
23+
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7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
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7300
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更多FGR15N40A供應(yīng)商 更新時(shí)間2025-3-13 16:30:00

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