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1N5819

1.5A,340kHz,BuckRegulatorwithSynchronizationCapability

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

1N5819

SCHOTTKYRECTIFIER1.0Amp

Description/Features The1N5818/1N5819axialleadedSchottkyrectifierhasbeenoptimizedforverylowforwardvoltagedrop,withmoderateleakage.Typicalapplicationsareinswitchingpowersupplies,converters,free-wheelingdiodes,andreversebatteryprotection. ?Lowprofile,axialleaded

IRF

International Rectifier

1N5819

1.0ASCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5819

1AMPSCHOTTKYBARRIERRECTIFIERS

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5819

SCHOTTKYBARRIERDIODE

FEATURES *Schottkybarrierchip *Lowpowerloss,highefficiency. *Lowforwardvoltagedrop. *Highsurgecurrentcapability. *Foruseinlowvoltage,highfrequencyinverters,freewheeling diode,andpolarityprotectionapplications.

UTCUnisonic Technologies

友順友順科技股份有限公司

1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5819

1.0AmpereSchottkyBarrierRectifiers

Features ?1.0ampereoperationatTA=90°Cwithnothermalrunaway. ?Foruseinlowvoltage,highfrequencyinvertersfreewheeling, andpolarityprotectionapplications.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

1N5819

SCHOTTKYBARRIERDIODE

SEMTECH

Semtech Corporation

1N5819

SCHOTTKYBARRIERRECTIFIER

VOLTAGE:20TO40VCURRENT:1.0A FEATURES ?Epitaxialconstructionforchip ?Highcurrentcapability ?Lowforwardvoltagedrop ?Lowpowerloss,highefficiency ?Highsurgecapability ?Hightemperaturesolderingguaranteed: 250°C/10sec/0.375(9.5mm)leadlength at5lbstension

SSE

Shanghai Sunrise Electronics

1N5819

1.0AMP.SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability

JGDJinan Gude Electronic Device

濟(jì)南固锝電子濟(jì)南固锝電子器件有限公司

1N5819

SCHOTTKYBARRIERRECTIFIER

RECTRON

Rectron Semiconductor

1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES *TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 *Metalsiliconjunction,majoritycarrierconduction *Guardringforovervoltageprotection *Lowpowerloss,highefficiency *

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

1N5819

1.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity ProtectionApplications

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

1N5819

SCHOTTKYBARRIERRECTIFIER(VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGERANGE-20to40VoltsCURRENT-1.0Ampere FEATURES ?Lowswitchingnoise ?Lowforwardvoltagedrop ?Highcurrentcapability ?Highswitchingcapability ?Highreliability ?Highsurgecapability

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

1N5819

1AMPERESCHOTTKYBARRIERRECTIFIER

TRSYS

Transys Electronics

1N5819

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

1N5819

1AMPERESCHOTTKYBARRIERRECTIFIER(VOLTAGE-20to40VoltsCURRENT-1.0Ampere)

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

1N5819

SCHOTTKYBARRIERRECTIFIERS1AMPERE20,30and40VOLTS

AxialLeadRectifiers ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow–voltage,

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

1N5819

1.0AMPSCHOTTKYBARRIERRECTIFIERS

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

1N5819

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ?Metalsiliconjunction,majoritycarrier conduction ?Guardringforovervoltageprotection ?Lowpowerloss, highefficiency ?

GE

GE Industrial Company

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DO-214ACSMA
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con
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SOT89
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SOT89
98215
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WJ
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SOT-89
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8700
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50000
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更多FH1N5819供應(yīng)商 更新時(shí)間2025-1-16 14:18:00