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FMH28N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMH28N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.19Ω(Max)@VGS=10V DESCRIPTION ·Switch-ModeandResonant-ModePowerSupplies ·DC-DCConverters ·PFCCircuits ·ACandDCMotorDrives ·RoboticsandServoControls

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMH28N50E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMH28N50ES

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FMH28N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR28N50E

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FMR28N50ES

N-CHANNELSILICONPOWERMOSFET

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

FQA28N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA28N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?28.4A,500V,RDS(on)=0.16?@VGS=10V ?Lowgatecharge(typical110nC) ?LowCrss(typical60pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA28N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=28.4A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA28N50

500VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA28N50F

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA28N50F

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFH28N50

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

IXFH28N50F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH28N50Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH28N50Q

HiPerFETPowerMOSFETsQ-Class

HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedIn

IXYS

IXYS Corporation

IXFT28N50F

HiPerRFPowerMOSFETs

HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Feihong
23+
TO-3P-3
100000
全新原裝
 詢價(jià)
FEIHONG/飛虹
22+23+
TO-3P
85192
代理假一賠十全新原裝現(xiàn)貨
 詢價(jià)
FeiHong(飛虹)
2112+
TO-3PN
105000
30個(gè)/管一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢價(jià)
FeiHong(飛虹)
20+
TO-3PN
30
詢價(jià)
24+
N/A
64000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
A
24+
DIP-8
46
詢價(jià)
飛虹
22+
TO-247
50000
飛虹原廠渠道,技術(shù)支持
 詢價(jià)
飛虹
23+
TO-247
46000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
ST
2017+
QFP
6528
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
ST
23+
QFP
20000
原廠原裝正品現(xiàn)貨
 詢價(jià)
更多FHA28N50供應(yīng)商 更新時(shí)間2024-11-28 16:20:00

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