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FJX2222A

GeneralPurposeTransistor

Features ?GeneralPurposeTransistor ?Collector-EmitterVoltage:VCEO=40V ?CollectorDissipation:PC(max)=325mW

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FJX2222A

NPNEpitaxialSiliconTransistor

Features ?General-PurposeTransistor ?Collector-EmitterVoltage:VCEO=40V

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FJX2222ATF

NPNEpitaxialSiliconTransistor

Features ?General-PurposeTransistor ?Collector-EmitterVoltage:VCEO=40V

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FMB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FMB2222A

NPNMulti-ChipGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FMBT2222

600mASiliconNPNEpitaxialPlanarTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FMBT2222A

SMDNPNTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FMBT2222A

FMBT2222ANPNBipolarTransistorEpitaxialplanardieconstruction

FEATURES ?Epitaxialplanardieconstruction ?ComplementaryPNPTypeavailable(FMMBT2907A) MARKING:1P MAXIMUMRATINGS*TA=25℃unlessotherwisenoted

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FMBT2222A

600mASiliconNPNEpitaxialPlanarTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

FMBT2222AW

SMDNPNTransistor

600mASiliconNPNEpitaxialPlanarTransistor Features ?Highcollector-emitterbreakdienvoltage. (BVCEO=40V@IC=10mA) ?Smallloadswitchtransistorwithhighgainandlow staurationvoltage,isdesignedforgeneralpurpose amflifierandswitchingapplicationsatcollectorcurren

FORMOSAFormosa MS

美麗微半導(dǎo)體美麗微半導(dǎo)體股份有限公司

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