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FIR180N10RG

N-Channel Enhancement Mode Power Mosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

HRD180N10K

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HRD180N10K

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

HRLF180N10K

100AvalancheTested

SEMIHOW

SemiHow Co.,Ltd.

HRLO180N10K

HighDenseCellDesign

SEMIHOW

SemiHow Co.,Ltd.

HRP180N10K

100VN-ChannelTrenchMOSFET

SEMIHOW

SemiHow Co.,Ltd.

IXFE180N10

HiPerFET-TMPowerMOSFET

HiPerFETPowerMOSFET SingleDieMOSFET Features ?ConformstoSOT-227Boutline ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?

IXYS

IXYS Corporation

IXFK180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

IXFN180N10

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·SynchronousRectification ·LowVoltagerelays ·BatteryChargers

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFN180N10

PowerMOSFET

IXYS

IXYS Corporation

IXFN180N10

HiPerFETPowerMOSFETSingleMOSFETDie

HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackage ?miniBLOC,withAluminiumNitrideIsolation ?Dynamicdv/dtRating ?AvalancheRated ?FastIntrinsicRectifier ?LowRDS(on) ?LowDrain-to-TabCapacitan

IXYS

IXYS Corporation

IXFR180N10

HiPerFETPowerMOSFETsISOPLUS247

VDSS=100V ID25=165A RDS(on)=8m? trr≤250ns SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX180N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX180N10

HiperFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX180N10

SingleMOSFETDie

VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode

IXYS

IXYS Corporation

IXTA180N10T

N-ChannelEnhancementModeAvalancheRated

TrenchMV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Ultra-lowOnResistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?175°COperatingTemperature Advantages ?Easytomount ?Spacesavings ?High

IXYS

IXYS Corporation

IXTA180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTC180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTH180N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多FIR180N10RG供應(yīng)商 更新時(shí)間2024-12-28 14:30:00