首頁 >FLUKE-289/FVF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Inductivesensor | IFMifm electronic Ltd. 易福門電子易福門電子(上海)有限公司 (中國總部) | IFM | ||
1Wepoxysealtype | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
35kV100mAHIGHVOLTAGEDIODE | GETEDZGETAI ELECTRONICS DEVICE CO., LTD 格特電子廣州市格特電子有限公司 | GETEDZ | ||
DUALFULL-BRIDGEDRIVER | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團 | STMICROELECTRONICS | ||
LEDARRAY | LIGITEK Ligitek electronic | LIGITEK | ||
UltraBrightGaAIAsLamps | PanasonicPanasonic Semiconductor 松下松下電器 | Panasonic | ||
Precision,WideBandwidth,SynchronizedIsolationAmplifier FEATURES LowNonlinearity:£0.012max(289L) FrequencyResponse:(-3dB)dcto20kHz (FullPower)dcto5kHz GainAdjustable1to100V/V,SingleResistor 3-PortIsolation:2500VCMVlsolationInput/Output LowGainDrift:£0.005/°Cmax FloatingPowerOutput:+15V@t5mA 120dBCMRat60Hz:Fu | ADAnalog Devices 亞德諾亞德諾半導(dǎo)體技術(shù)有限公司 | AD | ||
Increasedbandwidthandsignal-to-noisemargin | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
SiliconComplementaryTransistorsAudioPowerAmplifier,Switch Applications: ?1WAudioPowerAmplifierApplications ?SwitchingApplications | NTE NTE Electronics | NTE | ||
SiliconComplementaryTransistorsAudioPowerAmplifier Features: ●HighBreakdownVoltage:V(BR)CEO=80VMin ●HighCurrent:IC=500mA ●LowSaturationVoltage | NTE NTE Electronics | NTE | ||
Crystal-clearwaveformanalysis | PICO Pico Technology Ltd. | PICO | ||
Perma-Seal??MaleSnapPlugfor14-16AWGWire | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
Perma-Seal??MaleSnapPlugfor14-16AWGWire,Diameter3.96mm(.156),MylarTapeCarrier | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
Phototransistor | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
DriversforGaAsFETSwitchesandDigitalAttenuators Introduction ManyofM/A-COMsGaAsFETswitchesanddigitalattenuatorscannotoperatedirectlywithsimpleTTLorCMOSlogic,butinsteadrequireexternalcircuitstoprovideappropriatecontrolvoltages.Thisapplicationnote,anupdateofM539,DriversforGaAsFETMMICSwitchesandDigital | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
GaAsDPDTSwitchDC-2GHz Description M/A-COM’sSW-289isaGaAsMMICDPDTswitchinalowcostSOIC14-leadsurfacemountplasticpackage.TheSW-289isideallysuitedforusewhereverylowpowerconsumptionisrequired.Typicalapplicationsincludetransmit/receiveswitching,switchmatrices,digitalstepattenuators, | MACOM Tyco Electronics | MACOM | ||
GaAsDPDTSwitchDC-2GHz Description M/A-COM’sSW-289isaGaAsMMICDPDTswitchinalowcostSOIC14-leadsurfacemountplasticpackage.TheSW-289isideallysuitedforusewhereverylowpowerconsumptionisrequired.Typicalapplicationsincludetransmit/receiveswitching,switchmatrices,digitalstepattenuators, | MACOM Tyco Electronics | MACOM | ||
GaAsDPDTSwitchDC-2GHz Description M/A-COM’sSW-289isaGaAsMMICDPDTswitchinalowcostSOIC14-leadsurfacemountplasticpackage.TheSW-289isideallysuitedforusewhereverylowpowerconsumptionisrequired.Typicalapplicationsincludetransmit/receiveswitching,switchmatrices,digitalstepattenuators, | MACOM Tyco Electronics | MACOM | ||
GaAsDPDTSwitchDC-2GHz Description M/A-COM’sSW-289isaGaAsMMICDPDTswitchinalowcostSOIC14-leadsurfacemountplasticpackage.TheSW-289isideallysuitedforusewhereverylowpowerconsumptionisrequired.Typicalapplicationsincludetransmit/receiveswitching,switchmatrices,digitalstepattenuators, | MACOM Tyco Electronics | MACOM | ||
5-2000MHzMediumPowerGaAsHBTAmplifier ProductDescription StanfordMicrodevices’SXA-289amplifierisahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)MMIChousedinlow-costsurface-mountableplasticpackage.TheseHBTMMICsarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandcon | STANFORD Stanford Microdevices | STANFORD |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Fluke |
新 |
47 |
全新原裝 貨期兩周 |
詢價 | |||
Fluke |
2022+ |
43 |
全新原裝 貨期兩周 |
詢價 | |||
FLUKE |
24+ |
con |
2000 |
優(yōu)勢庫存,原裝正品 |
詢價 |
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