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FRX130D

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130H

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130R

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FSL130D

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL130R

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLH-S130C

2012Size1200/1400MHzChipMultilayerSplitter/Combiner

HITACHI-METALSHitachi Metals, Ltd

日立金屬日立金屬有限公司

FSS130D

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS130R

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FVDB-130B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-130BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

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15659
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鍏ㄦ柊鍘熻鐜拌揣/浠鋒牸鍙皥!
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更多FM130-T-Z供應(yīng)商 更新時(shí)間2025-3-14 11:00:00