FM1608B集成電路（IC）的存儲器規(guī)格書PDF中文資料

Functional Overview

The FM1608B is a 8 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.

Features

■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8

? High-endurance 100 trillion (1014) read/writes

? 151-year data retention (see the Data Retention and Endurance table)

? NoDelay? writes

? Advanced high-reliability ferroelectric process

■ SRAM and EEPROM compatible

? Industry-standard 8 K × 8 SRAM and EEPROM pinout

? 70-ns access time, 130-ns cycle time

■ Superior to battery-backed SRAM modules

? No battery concerns

? Monolithic reliability

? True surface mount solution, no rework steps

? Superior for moisture, shock, and vibration

? Resistant to negative voltage undershoots

■ Low power consumption

? Active current 15 mA (max)

? Standby current 25 μA (typ)

■ Voltage operation: VDD = 4.5 V to 5.5 V

■ Industrial temperature: –40°C to +85°C

■ 28-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant