FM24C256LZYYX中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They conform to all requirements in the Extended IIC 2-wire protocol. Furthermore, they are designed to minimize device pin count and simplify PC board layout requirements.

Features

■ Extended Operating Voltages

— C256: 4.5V - 5.5V

— C256L: 2.7V - 5.5V

— C256LZ: 2.7V - 5.5V

■ Low Power CMOS

— 1mA active current typical

— C256/C256L: 10μA standby current typical

— C256LZ: less than 1μA standby current

■ 2-wire IIC serial interface

■ 64 byte page write mode

■ Max write cycle time of 6ms byte/page

■ 40 years data retention

■ Endurance: 100,000 data changes

■ Hardware write protect for entire array

■ Schmitt trigger inputs for noise suppression

■ Electrostatic discharge protection > 4000V

■ 8-pin DIP and 8-pin SO (150 mil) packages. Contact factory for CSP package availability