FM25VN02-DG中文資料賽普拉斯數(shù)據(jù)手冊(cè)PDF規(guī)格書

Description

The FM25V02 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and

system level reliability problems caused by Serial Flash and other nonvolatile memories.

Features

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

High Endurance 100 Trillion (1014) Read/Writes

10 Year Data Retention

NoDelay? Writes

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme

Hardware Protection

Software Protection

Device ID

Device ID reads out Manufacturer ID & Part ID

Low Voltage, Low Power

Low Voltage Operation 2.0V – 3.6V

90 A Standby Current (typ.)

5 A Sleep Mode Current (typ.)

Industry Standard Configurations

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

8-pin “Green”/RoHS TDFN Package