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FRX130D

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130H

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FRX130R

RadiationHardenedN-ChannelPowerMOSFETs

Description TheIntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothN-ChannelandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25m?.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron

Intersil

Intersil Corporation

FSL130D

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSL130R

8A,100V,0.230Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSLH-S130C

2012Size1200/1400MHzChipMultilayerSplitter/Combiner

HITACHI-METALSHitachi Metals, Ltd

日立金屬日立金屬有限公司

FSS130D

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSS130R

11A,100V,0.210Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FVDB-130B

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

FVDB-130BHV

ThrrePhaseDoubleStageFilterforInvertersandPowerDrives

PREMOPREMO CORPORATION S.L

普萊默

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FUJI
原廠封裝
1000
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
FUJI/富士電機(jī)
23+
TO263
28888
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
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FUJI/富士電機(jī)
23+
TO-220
11550
FUJI/富士電機(jī)系列在售
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FUJI/富士電機(jī)
23+
TO-220
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
 詢價(jià)
FUJI/富士電機(jī)
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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ASI
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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國(guó)星光電
2447
1515
115000
14000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,
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國(guó)星光電
2021+
1515
499
詢價(jià)
更多FMB130供應(yīng)商 更新時(shí)間2025-4-17 10:31:00

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