首頁 >FMC20N50ES>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FMC20N50ES | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.31Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
FMC20N50ES | N-CHANNEL SILICON POWER MOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | |
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
20Amps500VoltageNChannelMOSFET | FCIFirst Components International 戈采戈采企業(yè)股份有限公司 | FCI | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applica | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFuji Electric 富士電機(jī)富士電機(jī)株式會社 | Fuji | ||
THINKISEMI16A,500VN-CHANNELPLANARSTRIPEPOWERMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
500VN-ChannelMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy | HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD 華汕電子器件汕頭華汕電子器件有限公司 | Huashan | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI | ||
500VN-ChannelMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司 | HMSEMI |
詳細(xì)參數(shù)
- 型號:
FMC20N50ES
- 制造商:
FUJI
- 制造商全稱:
Fuji Electric
- 功能描述:
N-CHANNEL SILICON POWER MOSFET
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FUJI/富士電機(jī) |
17+ |
TO-263 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
ROHM/羅姆 |
23+ |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | |||
F |
23+ |
T-PACK(S) |
10000 |
公司只做原裝正品 |
詢價 | ||
FUJI/富士電機(jī) |
23+ |
TO-263 |
137999 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FUJI |
原廠封裝 |
1000 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
FUJI/富士電機(jī) |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對原裝 假一罰十 |
詢價 | ||
FUJI/富士電機(jī) |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
FUJI/富士電機(jī) |
23+ |
N/A |
11550 |
FUJI/富士電機(jī)系列在售 |
詢價 | ||
FUJI/富士電機(jī) |
23+ |
N/A |
9000 |
專業(yè)配單,原裝正品假一罰十,代理渠道價格優(yōu) |
詢價 | ||
Fe |
21+ |
TO263 |
890 |
原裝現(xiàn)貨假一賠十 |
詢價 |
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