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FMV23N50ES

N-CHANNEL SILICON POWER MOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

IRFP23N50L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Application

IRF

International Rectifier

IRFP23N50L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.235?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFP23N50LPBF

HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A)

FeaturesandBenefits ?SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-Free

IRF

International Rectifier

IRFP23N50LPBF

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvailab

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP23N50LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    FMV23N50ES

  • 制造商：

    FUJI

  • 制造商全稱(chēng)：

    Fuji Electric

  • 功能描述：

    N-CHANNEL SILICON POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJI/富士電機(jī)
2022+
TO-220F
50000
原廠(chǎng)代理 終端免費(fèi)提供樣品
 詢(xún)價(jià)
FUJI/富士電機(jī)
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢(xún)價(jià)
FUJI/富士電機(jī)
23+
N/A
11550
FUJI/富士電機(jī)系列在售
 詢(xún)價(jià)
FUJI/富士電機(jī)
23+
N/A
9000
專(zhuān)業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢(xún)價(jià)
FUJITSU/富士通
24+
TO220F
58000
全新原廠(chǎng)原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢(xún)價(jià)
FUJI/富士電機(jī)
22+
原廠(chǎng)封裝
50000
只做原裝正品,假一罰十,歡迎咨詢(xún)
 詢(xún)價(jià)
ISC/固電
23+
TO-220F
10000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢(xún)價(jià)
SUPERTEX
23+
TO-220
69820
終端可以免費(fèi)供樣,支持BOM配單!
 詢(xún)價(jià)
FUJITSU/富士通
23+
NA/
914
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
 詢(xún)價(jià)
富士通FUJITS
24+
TO-TO-220F
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
更多FMV23N50ES供應(yīng)商 更新時(shí)間2025-3-8 14:00:00

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