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FOD3180SDV中文資料安森美半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FOD3180SDV
廠商型號(hào)

FOD3180SDV

功能描述

2 A Output Current, High Speed MOSFET Gate Driver Optocoupler

文件大小

393.03 Kbytes

頁(yè)面數(shù)量

14 頁(yè)

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡(jiǎn)稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-30 13:11:00

FOD3180SDV規(guī)格書詳情

Description

The FOD3180 is a 2 A Output Current, High Speed MOSFET Gate

Drive Optocoupler. It consists of a aluminium gallium arsenide

(AlGaAs) light emitting diode optically coupled to a CMOS detector

with PMOS and NMOS output power transistors integrated circuit

power stage. It is ideally suited for high frequency driving of power

MOSFETs used in Plasma Display Panels (PDPs), motor control

inverter applications and high performance DC/DC converters.

The device is packaged in an 8?pin dual in?line housing compatible

with 260°C reflow processes for lead free solder compliance.

Features

? Guaranteed Operating Temperature Range of ?40°C to +100°C

? 2 A Minimum Peak Output Current

? High Speed Response: 200 ns Max Propagation Delay over

Temperature Range

? 250 kHz Maximum Switching Speed

? 30 ns Typ Pulse Width Distortion

? Wide VCC Operating Range: 10 V to 20 V

? 5000 Vrms, 1 Minute Isolation

? Under Voltage Lockout Protection (UVLO) with Hysteresis

? Minimum Creepage Distance of 7.0 mm

? Minimum Clearance Distance of 7.0 mm

? C?UL, UL and VDE* Approved

? RDS(ON) of 1.5  (Typ.) Offers Lower Power Dissipation

? 15 kV/s Minimum Common Mode Rejection

? These are Pb?Free Devices

Applications

? Plasma Display Panel

? High Performance DC/DC Convertor

? High Performance Switch Mode Power Supply

? High Performance Uninterruptible Power Supply

? Isolated Power MOSFET Gate Drive

*Requires “V” ordering option

產(chǎn)品屬性

  • 型號(hào):

    FOD3180SDV

  • 功能描述:

    高速光耦合器 2A Out Cur Hi Spd IGBT MOSFET OPTO

  • RoHS:

  • 制造商:

    Avago Technologies

  • 最大正向二極管電壓:

    1.75 V

  • 最大反向二極管電壓:

    5 V

  • 最大功率耗散:

    40 mW

  • 最大工作溫度:

    +125 C

  • 最小工作溫度:

    - 40 C

  • 封裝/箱體:

    SOIC-5

  • 封裝:

    Tube

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