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首頁(yè)>FP06R12W1T4_B3>芯片詳情
FP06R12W1T4_B3_INFINEON/英飛凌_IGBT 模塊中宸芯科技
- 詳細(xì)信息
- 規(guī)格書(shū)下載
產(chǎn)品屬性
- 類(lèi)型
描述
- 型號(hào):
FP06R12W1T4_B3
- 功能描述:
IGBT 模塊
- RoHS:
否
- 制造商:
Infineon Technologies
- 產(chǎn)品:
IGBT Silicon Modules
- 配置:
Dual 集電極—發(fā)射極最大電壓
- VCEO:
600 V
- 集電極—射極飽和電壓:
1.95 V 在25
- C的連續(xù)集電極電流:
230 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
445 W
- 最大工作溫度:
+ 125 C
- 封裝/箱體:
34MM
供應(yīng)商
- 企業(yè):
中宸芯科技(深圳)有限公司
- 商鋪:
- 聯(lián)系人:
張先生
- 手機(jī):
15112997909
- 詢(xún)價(jià):
- 電話:
15112997909
- 地址:
深圳市龍崗區(qū)坂田街道吉華路535號(hào)泊萊中心大廈5樓512
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