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FP131DR-LF

OverCurrentProtectionIC

FEELINGFeeling Technology Corp.

遠(yuǎn)翔科技遠(yuǎn)翔科技股份有限公司

FSS131

LoadSwitchingApplications

LoadSwitchingApplications Features ?LowON-resistance. ?Ultrahigh-speedswitching. ?2.5Vdrive.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

FTC131

1A500V/600VBIDIRECTIONALTRIACS

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

GRF131

SURFACEMOUNTHIGHREPEATABILITYSPDT,BROADBAND18GHZ,40GBPSNON-LATCHINGRFRELAY

DESCRIPTION TheultraminiatureSeriesGRF131isdesignedtoprovide apracticalsurface-mountswitching solutionwithRFperformanceandrepeatabilityto 18GHz.TheGRF131improvesonTeledyneRelays’ heritageofminiatureRFrelaysbyincorporatingaprecision transmissionlinestructurein

TELEDYNE

Teledyne Technologies Incorporated

HCX-D131

For76.8V24SLiFePO4BatteryPacks

BESTECHBesTech Power Co., Ltd

百思特百思特電源有限公司

HVC131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVC131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVC131

SiliconEpitaxialPlanarPinDiode

Features Lowcapacitance.(C=0.8pFmax) Lowforwardresistance.(rf=1.0max)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVD131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVU131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVU131

LowCapacitanceLowForwardresistance

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

IGCS-E131GP

Industrial4-portPCIeunmanagedGigabitEthernetswitchcard

ORING

ORing Industrial Networking Corp

IGPCS-E131GP

Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard

ORING

ORing Industrial Networking Corp

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments

德州儀器

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更多FP131D-LF供應(yīng)商 更新時(shí)間2025-1-10 16:30:00