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FQA36P15

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=-36A@TC=25℃ ·DrainSourceVoltage- :VDSS=-150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQA36P15

P-Channel QFET? MOSFET -150 V, -36 A, 90 mΩ

Features -36A,-150V,RDS(on)=90mΩ(Max)@VGS=-10V,ID=-18A LowGateCharge(Typ.81nC) LowCrss(Typ.110pF) 100%AvalancheTested 175°CMaximumJunctionTemperatureRating Description ThisP-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconducto

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15

150V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15

150V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15

150V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15_V01

P-Channel QFET? MOSFET -150 V, -36 A, 90 mΩ

Features -36A,-150V,RDS(on)=90mΩ(Max)@VGS=-10V,ID=-18A LowGateCharge(Typ.81nC) LowCrss(Typ.110pF) 100%AvalancheTested 175°CMaximumJunctionTemperatureRating Description ThisP-ChannelenhancementmodepowerMOSFETis producedusingFairchildSemiconducto

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15_07

150V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQA36P15_F109

150V P-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IXTA36P15P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTC36P15P

P-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTH36P15P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP36P15P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ36P15

P-ChannelPowerMOSFET

DESCRIPTION ·DrainCurrent–ID=-36A@TC=25℃ ·DrainSourceVoltage- :VDSS=-150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(max)@VGS=-10V APPLICATIONS ·Switchingapplications ·DCChoppers ·AutomaticTestEquipment

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTQ36P15P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTR36P15P

P-ChannelEnhancementMode

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    FQA36P15

  • 功能描述:

    MOSFET 150V P-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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58600
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2023
10000
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7814
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5046
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更多FQA36P15供應商 更新時間2024-12-31 16:04:00