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FQA62N25

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQA62N25C

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

62N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Adva

IXYS

IXYS Corporation

IXFK62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXFK62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX62N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=62A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX62N25

HiPerFETPowerMOSFETsSingleMOSFETDie

HiPerFETPowerMOSFETs SingleMOSFETDie Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Ap

IXYS

IXYS Corporation

IXTK62N25

HighCurrentMegaMOSFET

HighCurrentMegaMOS?FET N-ChannelEnhancementMode Features ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Internationalstandardpackage ?Fastswitchingtimes Applications ?Motorcontrols ?DCchoppers ?Switched-modepowersupplies Adva

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    FQA62N25

  • 功能描述：

    MOSFET 250V N-Channel Adv Q-FET C-Series

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
仙童
06+
TO-247
1200
原裝庫存
 詢價
FAIRCHILD
24+
TO-247
776
全新原裝環(huán)保
 詢價
FAIRCHILD
22+
TO-247
5000
全新原裝現(xiàn)貨!自家?guī)齑?
 詢價
FAIRCHILD/仙童
20+
TO-3P
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
FAIRCHILD/仙童
21+
TO-3P
10
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD/仙童
23+
TO-3P
10000
公司只做原裝正品
 詢價
FAIRCHILD/仙童
22+
TO-3P
6000
十年配單,只做原裝
 詢價
FAIRCHILD/仙童
22+
TO-3P
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
FAIRCHILD/仙童
23+
TO-3P
10
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD
24+
TO-3P
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
更多FQA62N25供應(yīng)商 更新時間2024-12-22 9:16:00

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