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FQAF70N10中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FQAF70N10
廠商型號(hào)

FQAF70N10

功能描述

100V N-Channel MOSFET

文件大小

624.78 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-31 23:00:00

FQAF70N10規(guī)格書(shū)詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

? 45A, 100V, RDS(on) = 0.023? @VGS = 10 V

? Low gate charge ( typical 85 nC)

? Low Crss ( typical 150 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

? 175°C maximum junction temperature rating

產(chǎn)品屬性

  • 型號(hào):

    FQAF70N10

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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