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FQP10N50CF

500VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQP10N50CF

500VN-ChannelMOSFETImproveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF10N50CF

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.61Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQPF10N50CF

500VN-ChannelMOSFETImproveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXZH10N50LA

RFPowerMOSFET

IXYS

IXYS Corporation

IXZH10N50LB

RFPowerMOSFET

IXYS

IXYS Corporation

KF10N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50FR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50FZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50PR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,fastreverserecoverytime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會(huì)社

KF10N50PZ

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KSM10N50CF

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

RFH10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFM10N50

10A,450Vand500V,0.600Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFP-10N50TV

AluminumNitrideTerminations

ANARENAnaren Microwave

安倫

RFP-10N50TVR

AluminumNitrideTerminations

ANARENAnaren Microwave

安倫

RFV10N50

10A,500V,FastSwitchingN-ChannelEnhancement-ModePowerMOSFETs

Description TheRFV10N50BEisanN-ChannelfastswitchingMOSFETtransistorthatisdesignedforswitchingregulators,invertersandmotordrivers.TheRFV10N50BEisamonolithicstructureincorporatingahighvoltage,highcurrentMOSFET,acontrolMOSFETandESDprotectiondiodes.Asindicated

Intersil

Intersil Corporation

RFV10N50BE

10A,500V,FastSwitchingN-ChannelEnhancement-ModePowerMOSFETs

Description TheRFV10N50BEisanN-ChannelfastswitchingMOSFETtransistorthatisdesignedforswitchingregulators,invertersandmotordrivers.TheRFV10N50BEisamonolithicstructureincorporatingahighvoltage,highcurrentMOSFET,acontrolMOSFETandESDprotectiondiodes.Asindicated

Intersil

Intersil Corporation

STHI10N50

HIGHINJECTIONN-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS(IGBT)

?HIGHINPUTIMPEDANCE ?LOWON-VOLTAGE ?HIGHCURRENTCAPABILITY ?FASTTURN-OFF:tf

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB10N50CFTM_WS

  • 功能描述：

    MOSFET 500V 10A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
安森美
21+
12588
原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
三年內(nèi)
1983
只做原裝正品
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ON
20+
SMD
11520
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ON/安森美
24+
SMD
800
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Fairchild
1930+
N/A
816
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21+
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30000
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1809+
TO-263
1675
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FAIRCHILD仙童
23+
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10000
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Fairchild
22+
NA
816
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ON/安森美
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9000
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更多FQB10N50CFTM_WS供應(yīng)商 更新時(shí)間2024-12-22 15:48:00

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