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FQD20N06

60VN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD20N06

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

FQD20N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16.8A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.063Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD20N06

60VN-ChannelMOSFET

VDS60V ID(atVGS=10V)30A RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

FQD20N06

60VN-ChannelMOSFET

GeneralDescription ThisadvancedMOSFETtechnologyhasbeenespecially tailoredtoreduceon-stateresistance,andtoprovide superiorswitchingperformanceandhighavalancheenergy strength.Thesedevicesaresuitableforswitchedmode powersupplies,audioamplifier,DCmotorcontrol,and

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

FQD20N06L

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD20N06LE

60VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD20N06LE

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

FQD20N06LETM

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQD20N06LTF

N-ChannelQFETMOSFET60V,17.2A,42m

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號:

    FQB20N06TM

  • 功能描述:

    MOSFET 60V N-Channel QFET Logic Level

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
onsemi(安森美)
23+
TO-263
8357
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harris
16+
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10000
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FSC/ON
23+
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1550
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FAIRCHILD
24+
35200
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FAIRCHILD/仙童
23+
D2-PAKTO-263
24190
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FAIRCHILD/仙童
21+
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30000
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FAIRCHILD仙童
23+
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10000
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Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
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FAIRCHILD/仙童
22+
D2-PAKTO-263
18000
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ON Semiconductor
2022+
TO-263-3,D2Pak(2 引線 + 接片
38550
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更多FQB20N06TM供應(yīng)商 更新時(shí)間2025-2-2 10:22:00