FQB55N10中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
FQB55N10規(guī)格書詳情
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
? 55A, 100V, RDS(on) = 0.026? @VGS = 10 V
? Low gate charge ( typical 75 nC)
? Low Crss ( typical 130 pF)
? Fast switching
? 100 avalanche tested
? Improved dv/dt capability
? 175°C maximum junction temperature rating
? RoHS Compliant
產(chǎn)品屬性
- 型號:
FQB55N10
- 制造商:
Fairchild Semiconductor Corporation
- 功能描述:
MOSFET N D2-PAK
- 功能描述:
MOSFET, N, D2-PAK
- 功能描述:
MOSFET, N, D2-PAK; Transistor
- Polarity:
N Channel; Continuous Drain Current
- Id:
55A; Drain Source Voltage
- Vds:
100V; On Resistance
- Rds(on):
26mohm; Rds(on) Test Voltage
- Vgs:
10V; Threshold Voltage Vgs
- Typ:
4V; Power Dissipation
- Pd:
155W ;RoHS
- Compliant:
Yes
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
NA/ |
590 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
FAIRCHILD/仙童 |
24+ |
TO263 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Fairchild(飛兆/仙童) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
詢價 | ||
FAIRCHI |
2018+ |
TO263 |
6528 |
承若只做進口原裝正品假一賠十! |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FQB55N10 |
1420 |
1420 |
詢價 | ||||
FAIRCHILD |
17+ |
TO-263 |
9888 |
全新原裝現(xiàn)貨 |
詢價 | ||
ON/安森美 |
22+ |
SMD |
9000 |
原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
21+ |
TO263 |
1709 |
詢價 |