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FQB60N03L

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.0135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQB60N03L

N-Channel Logic Level PWM Optimized Power MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD60N03L

N-ChannelLogicLevelMOSFETs30V,30A,0.023ohm

GeneralDescription ThisdeviceemploysadvancedMOSFETtechnologyandfeatureslowgatechargewhilemaintaininglowonresistance.Optimizedforswitchingapplications,thisdeviceimprovestheoverallefficiencyofDC/DCconvertersandallowsoperationtohigherswitchingfrequencies. F

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD60N03L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40.3A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.019Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQP60N03L

30VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?60A,30V.RDS(on)=0.0135?@VGS=10V ?Lowgatecharge(typical18.5nC) ?LowCrss(typical155pF) ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQPF60N03L

30VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

GE60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheGE60N03providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsandsuitedforlowvoltageapplicationsuchas

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

GFP60N03

N-ChannelEnhancement-ModeMOSFET

Features ?AdvancedTrenchProcessTechnology ?HighDensityCellDesignforUltraLow On-Resistance ?SpeciallyDesignedforLowVoltageDC/DC Converters ?FastSwitchingforHighEfficiency

GE

GE Industrial Company

GI60N03

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    FQB60N03L

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    N-Channel Logic Level PWM Optimized Power MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價(jià)
ON/安森美
24+
TO-263
505348
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
FAI
24+
TO-252
60
詢價(jià)
FAI
24+
TO-252
1068
原裝現(xiàn)貨假一罰十
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
NA
19+
71769
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
FAI
24+
TO-252
2650
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨
 詢價(jià)
FAIRCHILD
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
FAIRCHILD
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
FAIRCHILD/仙童
18+
TO-263
900000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價(jià)
更多FQB60N03L供應(yīng)商 更新時(shí)間2025-2-23 14:00:00

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