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FQB8N60CTM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

FQB8N60CTM
廠商型號(hào)

FQB8N60CTM

功能描述

N-Channel QFET? MOSFET 600 V, 7.5 A, 1.2 廓

文件大小

804.09 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-22 18:05:00

FQB8N60CTM規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

? 7.5A, 600V, RDS(on)= 1.2?@VGS= 10 V

? Low gate charge ( typical 28 nC)

? Low Crss ( typical 12 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號(hào):

    FQB8N60CTM

  • 功能描述:

    MOSFET 600V N-Channel Adv Q-FET C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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TO-263
9852
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FAIRCHI
08+
TO-263
800
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ON/安森美
23+
D2-PAK
30000
原裝正品公司現(xiàn)貨,假一賠十!
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FSC
24+
TO-263
65300
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FAIRCHILD/仙童
08+
TO-263
15000
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FAIRCHILD
24+
TO-263
5000
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三年內(nèi)
1983
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FAIRCHILD/仙童
11+
NA
880000
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FAIRCHILD/仙童
2023+
SOT-263
9595
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Fairchild/ON
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
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