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首頁 >FQD9N08>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
FQD9N08	文件：536.03 Kbytes Page：9 Pages	80V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQD9N08	文件：543.35 Kbytes Page：9 Pages	80V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQD9N08	文件：305.97 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQD9N08L	文件：543.35 Kbytes Page：9 Pages	80V LOGIC N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI9N08	文件：547.1 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQI9N08L	文件：612.27 Kbytes Page：9 Pages	80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP9N08	文件：536.6 Kbytes Page：8 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQP9N08	文件：297.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQP9N08L	文件：541.68 Kbytes Page：8 Pages	80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF9N08	文件：547.85 Kbytes Page：8 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQPF9N08	文件：278.61 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQPF9N08L	文件：278.42 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQPF9N08L	文件：552.02 Kbytes Page：8 Pages	80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU9N08	文件：536.03 Kbytes Page：9 Pages	80VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstanda	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
FQU9N08	文件：331.3 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.3A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU9N08L	文件：331.31 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.21Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
FQU9N08L	文件：543.35 Kbytes Page：9 Pages	80VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
KSMD9N08	文件：1.44188 Mbytes Page：8 Pages	80VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
KSMU9N08	文件：1.44188 Mbytes Page：8 Pages	80VN-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

詳細參數(shù)

型號：
FQD9N08
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市亞泰盈科電子有限公司	FQD9N08	FAIRCHILD		SOT252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價
深圳市匯萊威科技有限公司	FQD9N08	ON/安森美	24+	TO-252	505348	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市一線半導體有限公司	FQD9N08	FAIRCHILD	24+	TO-252	8866		詢價
深圳市博浩通科技有限公司	FQD9N08	FAIRCHILD	23+	TO-252	11000	全新原裝	詢價
深圳市永貝爾科技有限公司	FQD9N08	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市宇集芯電子有限公司	FQD9N08	FAIRC	24+	TO-252	90000	一級代理商進口原裝現(xiàn)貨、價格合理	詢價
中天科工半導體（深圳）有限公司	FQD9N08	FAIRCHILD	20+	TO-252	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市維爾達電子有限公司	FQD9N08	FAIRCHILD	2023+	SOT252	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
瀚佳科技(深圳)有限公司	FQD9N08	FAIRC	24+	TO-252(DPAK)	16800	絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?	詢價
深圳市威爾健半導體有限公司	FQD9N08	NEXPERIA/安世	23+	SOT1289	69820	終端可以免費供樣,支持BOM配單!	詢價

更多FQD9N08供應商更新時間2024-12-31 14:00:00

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