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IRFB16N50K

SMPSMOSFET

IRF

International Rectifier

IRFB16N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB16N50K

LowGateChargeQgResultsinSimpleDriveRequirement

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB16N50KPBF

LowGateChargeQgResultsinSimpleDriveRequirement

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB16N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFA16N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA16N50P

PolarHVHiperFETPowerMOSFET

PolarHV?HiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?S

IXYS

IXYS Corporation

IXFA16N50P

PowerMOSFET

IXYS

IXYS Corporation

IXFC16N50P

PolarHVHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFC16N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH16N50P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH16N50P

PowerMOSFET

IXYS

IXYS Corporation

IXFH16N50P

PolarHVHiperFETPowerMOSFET

PolarHV?HiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?S

IXYS

IXYS Corporation

IXFP16N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=400mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP16N50P

PolarHVHiperFETPowerMOSFET

PolarHV?HiperFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?FastIntrinsicDiode ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Applications ?S

IXYS

IXYS Corporation

IXFP16N50P

PowerMOSFET

IXYS

IXYS Corporation

IXFP16N50P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=400mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA16N50P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Corporation

IXTP16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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2500
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23+
TO-262
2000000
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24+
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8866
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19960
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FAIRC
24+
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16800
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10000
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更多FQI16N50供應(yīng)商 更新時(shí)間2025-1-11 10:32:00