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FQPF4N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features ?2.8A,200V,RDS(on)=1.4?@VGS=10V ?Lowgatecharge(typical5.0nC) ?LowCrss(typical5.0pF) ?Fastswitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT4N20

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT4N20L

200VLOGICN-ChannelMOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT4N20LTF

N-ChannelQFET?MOSFET200V,0.85A,1.40廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor?’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQT4N20LTF-TP

N-ChannelEnhancementModePowerMOSFET

GENERALFEATURES Vos=200V 'b=1.0A@Ves=10V |Roson)£1.35Q@Ves=10V |SOT-223package.

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

FQU4N20

200VN-ChannelMOSFET

Features ?3.0A,200V,RDS(on)=1.4?(Max.)@VGS=10V ?Lowgatecharge(Typ.5.0nC) ?LowCrss(Typ.5.0pF) ?Fastswitching ?100avalanchetested ?Improveddv/dtcapability

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU4N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU4N20L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.2A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQU4N20L

200VLOGICN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU4N20L

200VLOGICN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

KF4N20LD

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LD

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LD/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LDI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D

KECKEC CORPORATION

KEC株式會社

KF4N20LW

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=1A ?Dra

KECKEC CORPORATION

KEC株式會社

KSMD4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU4N20

200VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

供應商型號品牌批號封裝庫存備注價格
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
VBSEMI
24+
con
35960
查現(xiàn)貨到京北通宇商城
詢價
仙童
06+
TO-220
5000
原裝庫存
詢價
FAIRCHILD
24+
TO-220
8866
詢價
FAIRCHIL
2015+
TO-220
12500
全新原裝,現(xiàn)貨庫存長期供應
詢價
FAIRCHIL
23+
TO-220
7600
全新原裝現(xiàn)貨
詢價
FSC
24+
T0-220
5000
只做原裝公司現(xiàn)貨
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應,歡迎來電咨詢
詢價
FSC
23+
TO-220
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
更多FQP4N20-VB供應商 更新時間2025-1-7 11:06:00