首頁 >FQPF9N25CRDTU>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.42Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
250VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFET?MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelQFET?MOSFET250V,7.4A,420廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=7.5A ·Dra | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai | KECKEC CORPORATION KEC株式會社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai | KECKEC CORPORATION KEC株式會社 | KEC | ||
250VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET9.0AMPERES250VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola |
詳細參數(shù)
- 型號:
FQPF9N25CRDTU
- 制造商:
Fairchild Semiconductor Corporation
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2021+ |
TO-220F |
9000 |
原裝現(xiàn)貨,隨時歡迎詢價 |
詢價 | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
FSC |
18+ |
TO-220F |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
FSC/ON |
23+ |
原包裝原封 □□ |
42981 |
原裝進口特價供應(yīng) QQ 1304306553 更多詳細咨詢 庫存 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-220F |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-220F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCHILD/仙童 |
2022 |
TO-220F |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
FAIRCHILD/仙童 |
2048+ |
TO-220F |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
FSC |
TO220 |
56520 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
FAIRCHILD/仙童 |
2023+ |
TO-220F |
11000 |
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站 |
詢價 |
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