首頁>FQU12N20>規(guī)格書詳情

FQU12N20中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

FQU12N20
廠商型號(hào)

FQU12N20

功能描述

200V N-Channel MOSFET

文件大小

694.93 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-22 23:00:00

FQU12N20規(guī)格書詳情

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

? 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A

? Low Gate Charge (Typ. 18 nC)

? Low Crss (Typ. 18 pF)

? 100 Avalanche Tested

? RoHS Compliant

產(chǎn)品屬性

  • 型號(hào):

    FQU12N20

  • 功能描述:

    MOSFET 200V N-Channel QFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
FAIRCHILD/仙童
23+
NA/
3400
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
F
2020+
TO-251
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
FAIRCHILD/仙童
22+
TO-251
100000
代理渠道/只做原裝/可含稅
詢價(jià)
FAIRCHILD
22+23+
TO251
11830
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
FAIRCHILD
TO-251
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
FAIRCHIL
24+
TO-251
8866
詢價(jià)
FAIRCHILD/仙童
22+
TO-251
9000
原裝正品
詢價(jià)
FAIRCHILD/仙童
23+
I-PAKTO-251
24190
原裝正品代理渠道價(jià)格優(yōu)勢
詢價(jià)
FAIRCHI
21+
TO-251
12588
原裝正品,自己庫存 假一罰十
詢價(jià)
FAIRCHILD/仙童
24+
TO-251
60
原裝現(xiàn)貨假一賠十
詢價(jià)