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FRE9160D中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

FRE9160D
廠商型號(hào)

FRE9160D

功能描述

30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs

文件大小

49.2 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-31 20:00:00

FRE9160D規(guī)格書詳情

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

Features

? 30A, -100V, RDS(on) = 0.095?

? Second Generation Rad Hard MOSFET Results From New Design Concepts

? Gamma

??? - Meets Pre-Rad Specifications to 100KRAD(Si)

??? - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

??? - Performance Permits Limited Use to 3000KRAD(Si)

? Gamma Dot

??? - Survives 3E9RAD(Si)/sec at 80 BVDSS Typically

??? - Survives 2E12 Typically If Current Limited to IDM

? Photo Current - 10.0nA Per-RAD(Si)/sec Typically

? Neutron

??? - Pre-RAD Specifications for 3E13 Neutrons/cm2

??? - Usable to 3E14 Neutrons/cm2

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