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FSF9150R

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R1

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R3

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R4

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYA9150D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYA9150R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

HDM9150

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

HV9150

HighVoltageOutputHystereticModeStepUpDC/DCController

GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte

SUTEX

Supertex, Inc

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9150

iscP-ChannelMOSFETTransistor

?DESCRIPTION ?Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.15? ?

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

Intersil

Intersil Corporation

IRH9150

SimpleDriveRequirements

IRF

International Rectifier

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET?technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRF

International Rectifier

IRHM9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRF

International Rectifier

IRHM9150

SimpleDriveRequirements

IRF

International Rectifier

IRHN9150

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.120ohm,Id=-22A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRF

International Rectifier

IRHN9150

SimpleDriveRequirements

IRF

International Rectifier

IRHN9150

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT

IRF

International Rectifier

J9150A

Aruba10GSFPLCLR10kmSMFXCVR

ROUTER-SWITCH

Router-switch Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    FSF9150R

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
2020+
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
FairchildSemiconductor
2022
ICSWITOVPUVLO9SIP
5058
原廠原裝正品,價(jià)格超越代理
詢價(jià)
FAIRCHILD
23+
9-SIP
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
FairchildSem
24+
9-SIP
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來電咨詢
詢價(jià)
FSC/ON
23+
原包裝原封□□
2157
原裝進(jìn)口特價(jià)供應(yīng)QQ1304306553更多詳細(xì)咨詢庫存
詢價(jià)
ON現(xiàn)貨
2022+
10-SIP模塊
350000
專注工業(yè)、軍工級(jí)別芯片,十五年優(yōu)質(zhì)供應(yīng)商
詢價(jià)
FAIRCHILD/仙童
13+
SIP9
27173
進(jìn)口原管現(xiàn)貨
詢價(jià)
三年內(nèi)
1983
納立只做原裝正品13590203865
詢價(jià)
更多FSF9150R供應(yīng)商 更新時(shí)間2024-10-26 9:20:00