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FSF9150R

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R1

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R3

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSF9150R4

22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSYA9150D

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

FSYA9150R

RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs

TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K

Intersil

Intersil Corporation

HDM9150

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

HV9150

HighVoltageOutputHystereticModeStepUpDC/DCController

GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte

SUTEX

Supertex, Inc

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9150

iscP-ChannelMOSFETTransistor

?DESCRIPTION ?Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.15? ?

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

Intersil

Intersil Corporation

IRH9150

SimpleDriveRequirements

IRF

International Rectifier

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET?technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRF

International Rectifier

IRHM9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRF

International Rectifier

IRHM9150

SimpleDriveRequirements

IRF

International Rectifier

IRHN9150

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.120ohm,Id=-22A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRF

International Rectifier

IRHN9150

SimpleDriveRequirements

IRF

International Rectifier

IRHN9150

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT

IRF

International Rectifier

J9150A

Aruba10GSFPLCLR10kmSMFXCVR

ROUTER-SWITCH

Router-switch Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    FSF9150R

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

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80000
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23+
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7750
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6980
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19960
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更多FSF9150R供應(yīng)商 更新時(shí)間2024-12-23 9:19:00