FSJ160R1中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
FSJ160R1規(guī)格書詳情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
? 70A, 100V, rDS(ON) = 0.022?
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
??? - 9nA Per-RAD(Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
??? - Usable to 3E14 Neutrons/cm2
產(chǎn)品屬性
- 型號：
FSJ160R1
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
H |
2318+ |
TO-220 |
4862 |
只做進(jìn)口原裝!假一賠百!自己庫存價(jià)優(yōu)! |
詢價(jià) | ||
INFINEON |
23+ |
7000 |
詢價(jià) | ||||
CUI |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價(jià) | ||
H |
21+ |
TO-220 |
645 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) | ||
SAC |
23+ |
NA/ |
960 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
H |
QQ咨詢 |
TO-220 |
64 |
全新原裝 研究所指定供貨商 |
詢價(jià) | ||
TE/泰科 |
2420+ |
/ |
237888 |
一級代理,原裝正品! |
詢價(jià) | ||
THOMASBETTS/ANSLEY |
新 |
3455 |
全新原裝 貨期兩周 |
詢價(jià) | |||
AMIS |
22+ |
PLCC-20P |
2000 |
進(jìn)口原裝!現(xiàn)貨庫存 |
詢價(jià) |
