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FSJ260R

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R1

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R3

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSJ260R4

44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

FUZETECFuzetec Technology Co., Ltd.

富致科技富致科技股份有限公司

FSMD260R

SurfaceMountablePTCResettableFuse:FSMD1812Series

RFERFE international

RFE國際公司RFE國際股份有限公司

FSPYC260F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSPYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

Intersil

Intersil Corporation

FSYC260D

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FSYC260R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombi

Intersil

Intersil Corporation

FT260

FutureTechnologyDevicesInternationalLtd.

FTDI

Future Technology Devices International Ltd.

FT260Q

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FT260Q-R

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FT260Q-x

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FT260S

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FT260S-U

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FT260S-x

HID-classUSBtoUART/I2CBridgeIC

FTDI

Future Technology Devices International Ltd.

FTC260

PointlevelswitchwithbuildupcompensationNocalibrationnecessary

YourBenefits ?Completeunitconsistingoftheprobeandelectronicinsert: –simplemounting –nocalibrationonstart-up ?Activebuild-upcompensation –accurateswitchpoint –highoperationalsafety ?Mechanicallyrugged –nowearingparts –longoperatinglife –nomaintenance ?

EHEndress+Hauser Group Services AG

恩德斯恩德斯豪斯(中國)

G260

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

EIC

EIC discrete Semiconductors

G260

SIDACs

SIDACs IT(RSM)=1.0Amperes VBO=95thru280Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    FSJ260R

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ISL
23+
65480
詢價(jià)
SAC
23+
NA/
960
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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SAC
24+23+
QFP
12580
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品
詢價(jià)
24+
N/A
52000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
Taiyo
23+
9-SMD
12183
確保原裝正品,專注終端客戶一站式BOM配單
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THOMASBETTS/ANSLEY
3455
全新原裝 貨期兩周
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AMIS
22+
PLCC-20P
2000
進(jìn)口原裝!現(xiàn)貨庫存
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TE/泰科
2420+
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237888
一級(jí)代理,原裝正品!
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FSK
SMD-4
35560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
詢價(jià)
Taiyo Yuden
21+
300
Taiyo授權(quán)代理,自營現(xiàn)貨
詢價(jià)
更多FSJ260R供應(yīng)商 更新時(shí)間2024-10-24 15:55:00