FSL9110D中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠(chǎng)商型號(hào) |
FSL9110D |
| 功能描述 | 2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| 文件大小 |
57.95 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠(chǎng)商 | Intersil Corporation |
| 企業(yè)簡(jiǎn)稱(chēng) |
Intersil |
| 中文名稱(chēng) | Intersil Corporation官網(wǎng) |
| 原廠(chǎng)標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-30 17:00:00 |
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更多FSL9110D規(guī)格書(shū)詳情
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
? 2.5A, -100V, rDS(ON) = 1.30?
? Total Dose
??? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
??? - Safe Operating Area Curve for Single Event Effects
??? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
??? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
??? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
??? - 0.3nA Per-RAD(Si)/s Typically
? Neutron
??? - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
??? - Usable to 3E14 Neutrons/cm2
產(chǎn)品屬性
- 型號(hào)：
FSL9110D
- 制造商：
INTERSIL
- 制造商全稱(chēng)：
Intersil Corporation
- 功能描述：
2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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|---|---|---|---|---|---|---|---|
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原廠(chǎng)封裝 |
11888 |
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46800 |
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22+ |
SMD |
5000 |
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詢(xún)價(jià) | ||
IR |
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8000 |
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詢(xún)價(jià) | ||
IR |
23+ |
TO262 |
7000 |
詢(xún)價(jià) | |||
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23+ |
SMD |
6800 |
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢(xún)價(jià) | ||
TOKO |
20+ |
電感器 |
682000 |
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IR |
23+ |
29178 |
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35200 |
一級(jí)代理/放心采購(gòu) |
詢(xún)價(jià) |
