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FSS9230D

4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9230D1

4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9230D3

4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

FSS9230R

4A,-200V,1.60Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

Intersil

Intersil Corporation

GFC9230

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

IRF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9230

TRANSISTORSP-CHANNEL(Vdss=-200V,Rds(on)=0.80ohm,Id=-6.5A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9230

-5.5Aand-6.5A,-150Vand-200V,0.8and1.2Ohm,P-ChannelPowerMOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

Intersil

Intersil Corporation

IRF9230

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9230

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號:

    FSS9230D

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
ZETEX
2016+
SOT23-5
6000
全新原裝現(xiàn)貨,量大價(jià)優(yōu),公司可售樣!
詢價(jià)
MU
23+
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
MU
23+
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
MURATA/村田
18+
SMD
288000
原裝正品價(jià)格優(yōu)勢
詢價(jià)
更多FSS9230D供應(yīng)商 更新時(shí)間2025-4-26 22:58:00