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FSYE913A0D3中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

FSYE913A0D3
廠商型號

FSYE913A0D3
功能描述

Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
文件大小

73.24 Kbytes
頁面數(shù)量

9 頁
生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)
原廠標(biāo)識
數(shù)據(jù)手冊

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FSYE913A0D3規(guī)格書詳情

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

產(chǎn)品屬性

  • 型號：

    FSYE913A0D3

  • 制造商：

    INTERSIL

  • 制造商全稱：

    Intersil Corporation

  • 功能描述：

    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs

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