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FT28C010-12UM-X

128K x 8 Bit 5V EEPROM

FORCE

Force Technologies Ltd

AT28C010-12

1Megabit128Kx8PagedCMOSE2PROM

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK

Space1-megabit(128Kx8)PagedParallelEEPROMs

Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-E

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-E

Space1-megabit(128Kx8)PagedParallelEEPROMs

Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-E

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-M

Space1-megabit(128Kx8)PagedParallelEEPROMs

Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-MQ

Space1-megabit(128Kx8)PagedParallelEEPROMs

Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-MQ

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-MQ

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-SV

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-SV

Space1-megabit(128Kx8)PagedParallelEEPROMs

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12DK-SV

Space1-megabit(128Kx8)PagedParallelEEPROMs

Description TheAT28C010-12DKisahigh-performanceElectricallyErasableandProgrammableRead-OnlyMemory.Itsonemegabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissi

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12JC

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12JI

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12JI

1-megabit(128Kx8)PagedParallelEEPROM

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

AT28C010-12JU

1-megabit(128Kx8)PagedParallelEEPROM

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

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